参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 0.5 A
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.7 V
DC Collector/Base Gain hfe Min250
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
SeriesBC807-xx
Pd - Power Dissipation0.3 W
BrandTaiwan Semiconductor
ImageTaiwan Semiconductor BC807-40 RFG
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerTaiwan Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT SOT-23 -50V -0.5A PN P Bipolar Transistor
Moisture Sensitivity Level1 (Unlimited)