参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT80 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 0.5 A
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 0.5 A
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Minimum Operating Temperature- 55 C
ImageTaiwan Semiconductor BC807-40W RFG
DescriptionBipolar Transistors - BJT SOT-323 -50V 0.5A PN P Bipolar Transistor
Collector-Emitter Saturation Voltage- 0.7 V
PackagingMouseReel
PackagingReel
PackagingCut Tape
Package / CaseSOT-323-3
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min250
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandTaiwan Semiconductor
Product TypeBJTs - Bipolar Transistors
RoHS Details
TARIC8541290000
ManufacturerTaiwan Semiconductor
SubcategoryTransistors
USHTS8541290095
Unit Weight0.000176 oz
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)