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IPP032N06N3GXKSA1
厂牌：Infineon Technologies
包装：Tube 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046338239
描述：Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS™ Power Mosfet - TO-220-3
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min149 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance2.6 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
Qg - Gate Charge124 nC
CAHTS8541290000
Minimum Operating Temperature- 55 C
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingTube
TARIC8541290000
ImageInfineon Technologies IPP032N06N3GXKSA1
RoHS Details
Channel ModeEnhancement
SeriesOptiMOS 3
Fall Time20 ns
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon Technologies
Factory Pack Quantity500
Unit Weight0.211644 oz
Product TypeMOSFET
ManufacturerInfineon
DescriptionMOSFET N-Ch 60V 120A TO220-3
USHTS8541290095
Pd - Power Dissipation188 W
Part # AliasesIPP032N06N3 G SP000680770
Vds - Drain-Source Breakdown Voltage60 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time120 ns
Moisture Sensitivity Level1 (Unlimited)