IPP032N06N3GXKSA1

IPP032N06N3GXKSA1

厂牌：Infineon

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046338243

描述：Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS™ Power Mosfet - TO-220-3

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min149 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current120 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width4.4 mm

Height15.65 mm

Rds On - Drain-Source Resistance2.6 mOhms

Transistor Type1 N-Channel

MXHTS85412999

Length10 mm

KRHTS8541299000

JPHTS8541290100

Qg - Gate Charge124 nC

CAHTS8541290000

Minimum Operating Temperature- 55 C

Package / CaseTO-220-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 175 C

CNHTS8541290000

PackagingTube

TARIC8541290000

ImageInfineon Technologies IPP032N06N3GXKSA1

RoHS Details

Channel ModeEnhancement

SeriesOptiMOS 3

Fall Time20 ns

SubcategoryMOSFETs

Product CategoryMOSFET

BrandInfineon Technologies

Factory Pack Quantity500

Unit Weight0.211644 oz

Product TypeMOSFET

ManufacturerInfineon

DescriptionMOSFET N-Ch 60V 120A TO220-3

USHTS8541290095

Pd - Power Dissipation188 W

Part # AliasesIPP032N06N3 G SP000680770

Vds - Drain-Source Breakdown Voltage60 V

TradenameOptiMOS

Number of Channels1 Channel

Rise Time120 ns

Moisture Sensitivity Level1 (Unlimited)