参数项参数值
参数项参数值
Forward Transconductance - Min150 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time35 ns
Rds On - Drain-Source Resistance4.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Height4.6 mm
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity1000
CNHTS8541210000
BrandSTMicroelectronics
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541210000
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 40 Volt 120 Amp
ImageSTMicroelectronics STB100NF04T4
Fall Time50 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290095
Pd - Power Dissipation300 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time220 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)