参数项参数值
参数项参数值
Gain Bandwidth Product fT330 MHz
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412999
DC Collector/Base Gain hfe Min200
KRHTS8541299000
CNHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Series2SC5707
BrandON Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
Unit Weight0.009935 oz
Factory Pack Quantity700
SubcategoryTransistors
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1 W
USHTS8541290075
DescriptionBipolar Transistors - BJT BIP NPN 8A 50V
Moisture Sensitivity Level1 (Unlimited)