参数项参数值
参数项参数值
Forward Transconductance - Min14 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current630 mA
Vgs - Gate-Source Voltage- 6 V, + 6 V
Typical Turn-On Delay Time5.1 ns
CNHTS8541290000
Rds On - Drain-Source Resistance400 mOhms
Typical Turn-Off Delay Time26.7 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-523-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Mounting StyleSMD/SMT
Qg - Gate Charge736.6 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG1012T-13
Factory Pack Quantity10000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 20V N-Ch Enhance Mode MOSFET
Channel ModeEnhancement
USHTS8541210095
Unit Weight0.000071 oz
Pd - Power Dissipation0.28 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time7.4 ns