参数项参数值
参数项参数值
Forward Transconductance - Min26 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current10.5 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541210101
Typical Turn-On Delay Time16 ns
Minimum Operating Temperature- 55 C
CAHTS8541210000
Rds On - Drain-Source Resistance14 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time97 ns
RoHS Details
Package / CaseSO-8
Factory Pack Quantity2500
ImageVishay Semiconductors SI4401BDY-T1-E3
PackagingMouseReel
PackagingCut Tape
PackagingReel
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
Maximum Operating Temperature+ 150 C
ManufacturerVishay
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 40V 10.5A 0.014Ohm
Qg - Gate Charge40 nC
MXHTS85412101
Product TypeMOSFET
SeriesSI4
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
Fall Time47 ns
CNHTS8541290000
Part # AliasesSI4401BDY-E3
Pd - Power Dissipation2.9 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time15 ns