参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min250
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.001058 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation350 mW
ImageDiodes Incorporated BC817-40Q-7-F
SeriesBC817-16Q / -25Q / -40Q
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541290095
DescriptionBipolar Transistors - BJT SS Low Sat Transistor
Moisture Sensitivity Level1 (Unlimited)