参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.6 A
Transistor PolarityN-Channel
MXHTS85423901
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time6.8 ns
Rds On - Drain-Source Resistance220 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.9 ns
Minimum Operating Temperature- 55 C
JPHTS8542390990
Package / CaseSOT-23-3
CAHTS8542390000
CNHTS8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Qg - Gate Charge8.3 nC
Factory Pack Quantity3000
ImageDiodes Incorporated DMN10H220L-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
BrandDiodes Incorporated
DescriptionMOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
TARIC8542399000
Product CategoryMOSFET
RoHS Details
SeriesDMN10
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Channel ModeEnhancement
Fall Time3.6 ns
Unit Weight0.000282 oz
USHTS8542390001
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time8.2 ns
Moisture Sensitivity Level1 (Unlimited)