参数项参数值
参数项参数值
Forward Transconductance - Min2 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3 ns
Rds On - Drain-Source Resistance120 mOhms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time15 ns
Width1.4 mm
Height1 mm
Length3 mm
Qg - Gate Charge6.4 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 65 C
Fall Time26 ns
ProductMOSFET Small Signal
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation830 mW
Part # Aliases934055571215
ImageNexperia BSH108,215
BrandNexperia
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerNexperia
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time8 ns
DescriptionMOSFET TAPE7 PWR-MO
Moisture Sensitivity Level1 (Unlimited)