SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

厂牌：Vishay

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046425247

描述：Trans MOSFET P-CH 40V 3.1A 3-Pin SOT-23 T/R

下载数据手册

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min10 s

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current4.4 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Length2.9 mm

Height1.45 mm

JPHTS8541210101

Typical Turn-On Delay Time8 ns

CAHTS8541210000

Rds On - Drain-Source Resistance77 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time20 ns

RoHS Details

Package / CaseSOT-23-3

ImageVishay Semiconductors SI2319CDS-T1-GE3

Factory Pack Quantity3000

PackagingCut Tape

PackagingMouseReel

PackagingReel

Maximum Operating Temperature+ 150 C

Width1.6 mm

TARIC8541290000

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

ManufacturerVishay

DescriptionMOSFET -40V Vds 20V Vgs SOT-23

Qg - Gate Charge21 nC

MXHTS85412101

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.001376 oz

Fall Time8 ns

CNHTS8541290000

Part # AliasesSI2319CDS-GE3

Pd - Power Dissipation2.5 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time9 ns

Moisture Sensitivity Level1 (Unlimited)