参数项参数值
参数项参数值
Forward Transconductance - Min530 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current310 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time1.7 ns
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time4.8 ns
Qg - Gate Charge0.81 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
BrandON Semiconductor
Series2N7002E
Factory Pack Quantity3500
Channel ModeEnhancement
TARIC8541290000
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET NFET SOT23 60V 115MA 7MO
Fall Time3.6 ns
ImageON Semiconductor 2N7002ET7G
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.000287 oz
USHTS8541290095
Pd - Power Dissipation420 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time1.2 ns
Moisture Sensitivity Level1 (Unlimited)