参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
MXHTS85423901
CNHTS8542390000
Qg - Gate Charge4.6 nC
Package / CaseTUMT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8542390000
Channel ModeEnhancement
Fall Time20 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTL035N03FRATR
Product CategoryMOSFET
Unit Weight0.178433 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRTL035N03FRA
USHTS8542390001
DescriptionMOSFET Nch 30V Vds 3.5A 0.056Rds(on) 4.6Qg
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time25 ns