参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 100 mA, 3 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage130 mV
DC Collector/Base Gain hfe Min180 at 100 mA, 3 V
MXHTS85412999
KRHTS8541299000
Package / CaseSC-96-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR543RTL
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1 W
Part # Aliases2SCR543R
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT Isolated AC/DC Converter
ManufacturerROHM Semiconductor
USHTS8541290095