参数项参数值
参数项参数值
ConfigurationDual
KRHTS8541299000
JPHTS8541290100
Forward Transconductance - Min4 S, 4.5 S
CAHTS8541290000
ImageInfineon Technologies BSL215CH6327XTSA1
Vgs th - Gate-Source Threshold Voltage0.95 V, - 0.9 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
DescriptionMOSFET SMALL SIGNAL+P-CH
Id - Continuous Drain Current1.5 A, - 1.5 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Minimum Operating Temperature- 55 C
Height1.1 mm
Length3 mm
Typical Turn-On Delay Time4.1 ns, 6.7 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
Rds On - Drain-Source Resistance108 mOhms, 173 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time6.8 ns, 14.5 ns
Package / CaseTSOP-6
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Width1.5 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
RoHS Details
MXHTS85412999
ManufacturerInfineon
TARIC8541290000
Qg - Gate Charge0.73 nC, - 3 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time1.4 ns, 14 ns
Unit Weight0.000522 oz
CNHTS8541210000
Part # AliasesBSL215C H6327 SP001101000
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage20 V, - 20 V
Number of Channels2 Channel
Rise Time7.6 ns, 9.7 ns
Moisture Sensitivity Level1 (Unlimited)