参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage1.6 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance1.52 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
Mounting StyleSMD/SMT
Package / CasePG-TSDSON-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingReel
SubcategoryMOSFETs
ImageInfineon Technologies IAUC100N04S6L014ATMA1
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time12 ns
Product TypeMOSFET
ManufacturerInfineon
USHTS8541290095
Unit Weight0.003966 oz
Factory Pack Quantity5000
Product CategoryMOSFET
DescriptionMOSFET MOSFET_(20V 40V)
Part # AliasesIAUC100N04S6L014 SP001700120
Pd - Power Dissipation100 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)