参数项参数值
参数项参数值
Forward Transconductance - Min8.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current3.7 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time37 ns
Qg - Gate Charge39 nC
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
TARIC8541290000
RoHS Details
PackagingReel
PackagingCut Tape
SubcategoryMOSFETs
ImageInfineon Technologies ISP650P06NMXTSA1
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time11 ns
Product TypeMOSFET
ManufacturerInfineon
SeriesISP06P003
USHTS8541290095
Factory Pack Quantity1000
Unit Weight0.004019 oz
Product CategoryMOSFET
DescriptionMOSFET SMALL SIGNAL MOSFETS
Part # AliasesISP650P06NM SP004987266
Pd - Power Dissipation4.2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)