RQ5E025ATTCL

厂牌：ROHM(罗姆)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046444591

描述：MOSFET P-CH -2.5A -30V SOT-346T; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:1W; Transistor Case Style:SOT-346T; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

下载数据手册

商品参数

参数项参数值

Forward Transconductance - Min2.1 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current2.5 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6.5 ns

Rds On - Drain-Source Resistance70 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time22 ns

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge5.4 nC

Package / CaseSOT-346-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time5.5 ns

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandROHM Semiconductor

RoHS Details

ImageROHM Semiconductor RQ5E025ATTCL

Unit Weight0.003454 oz

Product CategoryMOSFET

SubcategoryMOSFETs

Factory Pack Quantity3000

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation1 W

Part # AliasesRQ5E025AT

USHTS8541290095

DescriptionMOSFET Pch -30V -2.5A Si MOSFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time8.5 ns

Moisture Sensitivity Level1 (Unlimited)