参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
ConfigurationSingle
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
TechnologySi
Minimum Operating Temperature- 65 C
Transistor PolarityNPN
KRHTS8541299000
Emitter- Base Voltage VEBO6 V
JPHTS8541210101
QualificationAEC-Q101
CAHTS8541210000
ImageON Semiconductor SPZT2222AT1G
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage1 V
Maximum Operating Temperature+ 150 C
Package / CaseSOT-223-4
DescriptionBipolar Transistors - BJT SS SW XSTR NPN 40V
PackagingReel
PackagingMouseReel
PackagingCut Tape
Mounting StyleSMD/SMT
TARIC8541210000
BrandON Semiconductor
Factory Pack Quantity1000
MXHTS85412101
Product TypeBJTs - Bipolar Transistors
SeriesPZT2222A
ManufacturerON Semiconductor
RoHS Details
SubcategoryTransistors
USHTS8541290075
Unit Weight0.006702 oz
CNHTS8541210000
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)