参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.25 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time15.2 ns
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50.2 ns
Qg - Gate Charge44.3 nC
Moisture SensitiveYes
Package / CasePowerFLAT-8x8-5
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time7.3 ns
RoHS Details
ImageSTMicroelectronics STL36N60M6
SeriesMdmesh M6
Factory Pack Quantity3000
BrandSTMicroelectronics
Product TypeMOSFET
Unit Weight0.006349 oz
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PTD HIGH VOLTAGE
Pd - Power Dissipation160 W
Vds - Drain-Source Breakdown Voltage600 V
TradenameMDmesh
Number of Channels1 Channel
Rise Time5.3 ns