参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current24 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Rds On - Drain-Source Resistance120 mOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge37 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541290000
BrandSTMicroelectronics
Factory Pack Quantity600
ManufacturerSTMicroelectronics
Channel ModeEnhancement
SeriesSTW28N60M2
TARIC8541290000
Product CategoryMOSFET
RoHS Details
ImageSTMicroelectronics STW28N60M2
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight1.340411 oz
USHTS8541290095
Pd - Power Dissipation190 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel