参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current28 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Length6.15 mm
Height1.04 mm
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance29 mOhms
RoHS Details
Package / CasePowerPAK-SO-8
Factory Pack Quantity3000
ImageVishay Semiconductors SI7469DP-T1-E3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Width5.15 mm
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
Maximum Operating Temperature+ 150 C
ManufacturerVishay
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET -80V Vds 20V Vgs PowerPAK SO-8
Qg - Gate Charge160 nC
MXHTS85412999
Product TypeMOSFET
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
CNHTS8541290000
Part # AliasesSI7469DP-E3
Pd - Power Dissipation83 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)