参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 1 mA, 5 V
Gain Bandwidth Product fT185 MHz, 220 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A, - 900 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
Length3.1 mm
Height1 mm
QualificationAEC-Q101
KRHTS8541299000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 65 C
JPHTS8541290100
ManufacturerNexperia
Factory Pack Quantity3000
CAHTS8541290000
BrandNexperia
Package / CaseTSOP-6
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width1.7 mm
Mounting StyleSMD/SMT
RoHS Details
ImageNexperia PBSS4160DPN,115
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT LO VCESAT(BISS)TRANS
MXHTS85412999
Product TypeBJTs - Bipolar Transistors
USHTS8541290075
Unit Weight0.000394 oz
CNHTS8541210000
Part # Aliases934058119115
Pd - Power Dissipation290 mW, 420 mW
Moisture Sensitivity Level1 (Unlimited)