参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 500 mA, 2 V
Gain Bandwidth Product fT120 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
Height1.7 mm
Length6.7 mm
QualificationAEC-Q101
KRHTS8541299000
ManufacturerNexperia
Minimum Operating Temperature- 65 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-223-3
Factory Pack Quantity1000
DC Collector/Base Gain hfe Min250 at 500 mA, 2 V, 200 at 1 A, 2 V, 150 at 2 A, 2 V, 50 at 5 A, 2 V
BrandNexperia
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width3.7 mm
RoHS Details
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageNexperia PBSS5540Z,115
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP 40V 5A LO VCESAT
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
USHTS8541290075
Unit Weight0.035274 oz
CNHTS8541290000
Part # Aliases934055496115
Pd - Power Dissipation2000 mW