参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 500 mA, 2 V
Gain Bandwidth Product fT110 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current4.6 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Width2.6 mm
MXHTS85412101
DC Collector/Base Gain hfe Min300 at 500 mA, 2 V, 250 at 1 A, 2 V, 180 at 2 A, 2 V, 90 at 4 A, 2 V, 70 at 5 A, 2 V
Height1.6 mm
Length4.6 mm
KRHTS8541299000
CNHTS8541210000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
ImageNexperia PBSS305NX,115
BrandNexperia
Unit Weight0.000212 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
Pd - Power Dissipation600 mW
Part # Aliases934059012115
DescriptionBipolar Transistors - BJT NPN 80V 4.6A
USHTS8541290075