参数项参数值
参数项参数值
DC Current Gain hFE Max430, 245
Gain Bandwidth Product fT175 MHz, 125 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO7 V
Factory Pack Quantity3000
RoHS Details
QualificationAEC-Q101
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandNexperia
KRHTS8541219000
Collector-Emitter Saturation Voltage90 mV, - 125 mV
Maximum Operating Temperature+ 150 C
ManufacturerNexperia
TARIC8541210000
Package / CaseDFN-2020-6
JPHTS8541210101
Minimum Operating Temperature- 55 C
DC Collector/Base Gain hfe Min290, 245
CAHTS8541210000
SubcategoryTransistors
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
ImageNexperia PBSS4160PANP,115
Product CategoryBipolar Transistors - BJT
MXHTS85412101
DescriptionBipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor
USHTS8541210075
Unit Weight0.000250 oz
CNHTS8541210000
Part # Aliases934066888115
Pd - Power Dissipation1450 mW