参数项参数值
参数项参数值
Forward Transconductance - Min30 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance6.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Qg - Gate Charge57 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ImageIXYS IXTA110N055T2-TRL
TARIC8541290000
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time23 ns
Factory Pack Quantity800
SubcategoryMOSFETs
Product CategoryMOSFET
BrandIXYS
Product TypeMOSFET
DescriptionMOSFET IXTA110N055T2 TRL
ManufacturerIXYS
USHTS8541290095
Pd - Power Dissipation180 W
Vds - Drain-Source Breakdown Voltage55 V
TradenameTrenchT2
Number of Channels1 Channel
Rise Time25 ns
Moisture Sensitivity Level1 (Unlimited)