参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Id - Continuous Drain Current6.2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 P-Channel
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge53 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRF7241TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.019048 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT PCh -40V -6.2A 41mOhm 53nC
Vds - Drain-Source Breakdown Voltage40 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)