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FDMS86163P
厂牌：onsemi
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046466668
描述：Trans MOSFET P-CH 100V 7.9A 8-Pin PQFN EP T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.8 V
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time33 ns
Width5 mm
Height1.1 mm
Length6 mm
MXHTS85412999
Qg - Gate Charge42 nC
KRHTS8541299000
Package / CasePower-56-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time6.9 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
SeriesFDMS86163P
BrandON Semiconductor / Fairchild
Unit Weight0.002402 oz
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMS86163P
Product CategoryMOSFET
Pd - Power Dissipation104 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET PT5 100/25V Pch Power Trench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time8.8 ns
Moisture Sensitivity Level1 (Unlimited)