参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Length2.2 mm
Width1.35 mm
Height1 mm
Collector-Emitter Saturation Voltage0.3 V
Minimum Operating Temperature- 55 C
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated MMDT3946-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
DescriptionBipolar Transistors - BJT 40 / 40V 200mW
SeriesMMDT39
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000212 oz
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)