参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityNPN
Width0.8 mm
Height0.5 mm
MXHTS85412101
Length1.2 mm
CNHTS8541210000
KRHTS8541219000
DC Collector/Base Gain hfe Min80
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-723-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
ManufacturerON Semiconductor
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageON Semiconductor DTC123JM3T5G
SeriesDTC123JM3
Factory Pack Quantity8000
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
USHTS8541210095
Pd - Power Dissipation260 mW
Typical Resistor Ratio0.047
Typical Input Resistor2.2 kOhms
Moisture Sensitivity Level1 (Unlimited)