参数项参数值
参数项参数值
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
QualificationAEC-Q101
Collector-Emitter Saturation Voltage250 mV
DC Collector/Base Gain hfe Min35
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Unit Weight0.000282 oz
SeriesMMUN2211L
Pd - Power Dissipation246 mW
BrandON Semiconductor
ImageON Semiconductor SMMUN2211LT1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SS SOT23 BR XSTR SPCL TR
Moisture Sensitivity Level1 (Unlimited)