参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 16 V, + 5 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance2.9 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time49 ns
Qg - Gate Charge158 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
Fall Time52 ns
SubcategoryMOSFETs
Factory Pack Quantity1000
Product CategoryMOSFET
BrandInfineon Technologies
Product TypeMOSFET
DescriptionMOSFET MOSFET_(20V 40V)
ManufacturerInfineon
Part # AliasesIPB120P04P4-04 SP002325758
Pd - Power Dissipation136 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time20 ns