参数项参数值
参数项参数值
DC Current Gain hFE Max100 at 10 mA, 1 V
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO4 V
Length2.9 mm
Height0.95 mm
Minimum Operating Temperature- 55 C
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
BrandROHM Semiconductor
Maximum Operating Temperature+ 150 C
Width1.3 mm
Mounting StyleSMD/SMT
RoHS Details
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor SSTA56T116
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT DDVR PNP 80V 500MA
Product TypeBJTs - Bipolar Transistors
SeriesSSTA56
Unit Weight0.000282 oz
Part # AliasesSSTA56
Pd - Power Dissipation350 mW