参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
ConfigurationSingle
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
KRHTS8541219000
TechnologySi
JPHTS8541290100
Transistor PolarityNPN
CAHTS8541290000
Emitter- Base Voltage VEBO6 V
Minimum Operating Temperature- 55 C
ImageROHM Semiconductor SST4401T116
Height0.95 mm
Length2.9 mm
DescriptionBipolar Transistors - BJT NPN 40V 0.6A
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min20
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Width1.3 mm
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
TARIC8541290000
MXHTS85412999
RoHS Details
SubcategoryTransistors
USHTS8541210075
Unit Weight0.001023 oz
CNHTS8541290000
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)