参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
ConfigurationSingle
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
KRHTS8541299000
JPHTS8541290100
Length2.9 mm
Minimum Operating Temperature- 55 C
Product CategoryBipolar Transistors - BJT
Height0.95 mm
CAHTS8541290000
Collector-Emitter Saturation Voltage- 1.6 V
Maximum Operating Temperature+ 150 C
ImageROHM Semiconductor SST2907AT116
DC Collector/Base Gain hfe Min50
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width1.3 mm
DescriptionBipolar Transistors - BJT PNP 60V 0.6A
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
BrandROHM Semiconductor
RoHS Details
MXHTS85412999
SubcategoryTransistors
SeriesSST2907A
USHTS8541290095
Unit Weight0.000282 oz
CNHTS8541210000
Part # AliasesSST2907A
Pd - Power Dissipation350 mW