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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
ConfigurationSingle
Continuous Collector Current600 mA
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
CAHTS8542330000
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor SST4401HZGT116
Collector-Emitter Saturation Voltage400 mV, 750 mV
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min20
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionBipolar Transistors - BJT NPN SOT-23 0.6A 40V VCEO
Mounting StyleSMD/SMT
TARIC8541210000
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
MXHTS85423301
RoHS Details
SubcategoryTransistors
USHTS8542330001
Unit Weight0.001023 oz
CNHTS8541210000
Part # AliasesSST4401HZG
Pd - Power Dissipation350 mW