参数项参数值
参数项参数值
DC Current Gain hFE Max100 at 10 mA, 1 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
ConfigurationSingle
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current0.5 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO4 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
Length2.9 mm
JPHTS8541290100
Height0.95 mm
CAHTS8541290000
Collector-Emitter Saturation Voltage0.25 V
Maximum Operating Temperature+ 150 C
ImageROHM Semiconductor SSTA06T116
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width1.3 mm
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
DescriptionBipolar Transistors - BJT NPN 80V 0.5A
TARIC8541290000
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
MXHTS85412999
RoHS Details
SeriesSSTA06
USHTS8541290095
Unit Weight0.001023 oz
CNHTS8541290000
Part # AliasesSSTA06
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)