参数项参数值
参数项参数值
Forward Transconductance - Min41 S
Vgs th - Gate-Source Threshold Voltage4.6 V
TechnologySi
Id - Continuous Drain Current114 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance7.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Qg - Gate Charge41 nC
CNHTS8541290000
Package / CaseTSON-8-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time4 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
BrandInfineon Technologies
ImageInfineon Technologies BSC074N15NS5ATMA1
Product CategoryMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Product TypeMOSFET
ManufacturerInfineon
Pd - Power Dissipation214 W
Part # AliasesBSC074N15NS5 SP004419136
DescriptionMOSFET TRENCH >=100V
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time4 ns
Moisture Sensitivity Level1 (Unlimited)