参数项参数值
参数项参数值
Forward Transconductance - Min0.44 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current760 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time23 ns
Width1.3 mm
Height1.1 mm
Length2.9 mm
Qg - Gate Charge3.4 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
ProductMOSFET Small Signal
Fall Time16 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRLML5103TRPBF
Unit Weight0.000282 oz
RoHS Details
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation540 mW
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time8.2 ns
Moisture Sensitivity Level1 (Unlimited)