参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.3 mm
Collector-Emitter Saturation Voltage0.6 V
Height0.94 mm
DC Collector/Base Gain hfe Min200
Length2.9 mm
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ImageON Semiconductor BC847BLT1G
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
SeriesBC847BL
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
Unit Weight0.001058 oz
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)