参数项参数值
参数项参数值
Forward Transconductance - Min0.65 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Rds On - Drain-Source Resistance4.3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time125 ns
Mounting StyleThrough Hole
Qg - Gate Charge17 nC
Package / CaseSC-67-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
RoHS Details
ImageToshiba 2SK3564(STA4,Q,M)
PackagingTube
SubcategoryMOSFETs
Channel ModeEnhancement
BrandToshiba
Fall Time35 ns
Series2SK3564
Product TypeMOSFET
Factory Pack Quantity50
ManufacturerToshiba
Unit Weight0.059966 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET 900V N-CH 3A
Pd - Power Dissipation40 W
TradenameMOSIV
Vds - Drain-Source Breakdown Voltage900 V
Number of Channels1 Channel
Rise Time20 ns