参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage600 mV
TechnologySi
Width1.3 mm
Transistor PolarityN-Channel
Id - Continuous Drain Current5.8 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Height1.1 mm
Typical Turn-On Delay Time1.5 ns
MXHTS85412101
Length2.9 mm
CNHTS8541210000
Rds On - Drain-Source Resistance26.5 mOhms
KRHTS8541219000
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge13.3 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN3042L-7
Factory Pack Quantity3000
SeriesDMN3042
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A
Channel ModeEnhancement
Fall Time4.9 ns
USHTS8541210095
Unit Weight0.001023 oz
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time3.3 ns
Moisture Sensitivity Level1 (Unlimited)