参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current12 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance200 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Width4.7 mm
Height16.3 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time80 ns
PackagingTube
TARIC8541290000
RoHS Details
ImageON Semiconductor / Fairchild RFP12N10L
Unit Weight0.063493 oz
SeriesRFP12N10L
Factory Pack Quantity800
BrandON Semiconductor / Fairchild
Pd - Power Dissipation60 W
Product TypeMOSFET
Part # AliasesRFP12N10L_NL
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
DescriptionMOSFET TO-220AB N-CH POWER
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel
Rise Time70 ns
TypeMOSFET
Moisture Sensitivity LevelNot Applicable