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FCB199N65S3
厂牌：onsemi
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046483917
描述：MOSFET N-CH 650V 14A D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min10 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current14 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance170 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time52 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge30 nC
Mounting StyleSMD/SMT
Package / CaseD2PAK-3
JPHTS8541290100
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity800
BrandON Semiconductor / Fairchild
SeriesFCB199N65S3
Product TypeMOSFET
DescriptionMOSFET SuperFET3 650V 199mOhm D2PAK PKG
Channel ModeEnhancement
TARIC8541290000
ManufacturerON Semiconductor
Fall Time15 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.046296 oz
SubcategoryMOSFETs
Pd - Power Dissipation98 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time23 ns
Moisture Sensitivity Level1 (Unlimited)