参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage600 mV
TechnologySi
Id - Continuous Drain Current265 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.9 ns
Rds On - Drain-Source Resistance2.8 Ohms
Transistor Type1 N-Channel Trench MOSFET
Typical Turn-Off Delay Time12.5 ns
MXHTS85412999
Qg - Gate Charge0.49 nC
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Fall Time5.1 ns
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation402 mW
BrandNexperia
Part # Aliases934068054215
ImageNexperia BSN20BKR
ManufacturerNexperia
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541290095
Number of Channels1 Channel
Rise Time8.4 ns
DescriptionMOSFET 60V N-channel Trench MOSFET
Moisture Sensitivity Level1 (Unlimited)