参数项参数值
参数项参数值
tariffCode85412100
Power Dissipation P Channel400mW
rohsCompliantYES
Transistor PolarityN Channel
Power Dissipation N Channel400mW
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.5V
No. of Pins6Pins
usEccnEAR99
Drain Source On State Resistance P Channel2.8ohm
Automotive Qualification StandardAEC-Q101
Drain Source Voltage Vds30V
MSLMSL 1 - Unlimited
Drain Source On State Resistance N Channel2.8ohm
Product Range-
euEccnNLR
Channel TypeN Channel
QualificationAEC-Q101
On Resistance Rds(on)2.8ohm
Power Dissipation Pd400mW
productTraceabilityNo
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel260mA
Continuous Drain Current Id260mA
Continuous Drain Current Id P Channel260mA
Operating Temperature Max150°C
Transistor MountingSurface Mount
Drain Source Voltage Vds N Channel30V
SVHCNo SVHC (17-Jan-2023)