参数项参数值
参数项参数值
Forward Transconductance - Min24 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2.55 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.2 ns
Rds On - Drain-Source Resistance14.6 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time9.7 ns
Width3.9 mm
MXHTS85412999
Height1.75 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge7.4 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time4.1 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
BrandInfineon / IR
ImageInfineon / IR IRF8910TRPBF
Unit Weight0.005644 oz
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity4000
Product TypeMOSFET
ManufacturerInfineon
Pd - Power Dissipation2 W
DescriptionMOSFET MOSFT DUAL NCh 20V 10A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time10 ns