参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12.5 V, +12.5 V
Typical Turn-On Delay Time160 ns
Rds On - Drain-Source Resistance11.6 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time19700 ns
MXHTS85412999
Qg - Gate Charge6 nC
KRHTS8541299000
Package / CaseECH-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
Channel ModeEnhancement
Fall Time23600 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesECH8697R
ImageON Semiconductor ECH8697R-TL-W
BrandON Semiconductor
ManufacturerON Semiconductor
Pd - Power Dissipation1.6 W
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage24 V
DescriptionMOSFET NCH 2.5V COMMON-DRAIN
Number of Channels2 Channel
Rise Time230 ns